Abstract:

In our tight-binding muffin-tin-orbital (TB-MTO) transport formalism, the scattering states are calculated explicitly so we are able to perform ``channel decomposition'' of the scattering induced by specular interfaces, interface disorder etc. Getting spin imbalance in the high carrier mobility semiconductor is essential for the developing spintronics. Spin-injection from ferromagnetic transition metal to semiconductor, which holds the promise for the room temperature application, is obstructed by the large resistivity difference between metal and semiconductor. Based on the method mentioned above, we studied the spin-injection through Fe|GaAs interfaces. The specular scattering due to band mismatch at interface and the diffusive scattering due to interface disorder are considered on the equate footing. The suggestion of the "interface engineering" on the Fe|GaAs system is also reported.
 
 
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