Abstract:

Numerous proposals for future spintronic and quantum information devices are based on manipulating or storing information in the form of electronic or nuclear spin polarization in semiconductor quantum dots (QD). This approach is very attractive since a long coherence time is expected, as a result of the inhibition of the classical spin relaxation mechanisms: the discrete energy levels in semiconductor quantum dots and the corresponding lack of energy dispersion lead to a slowdown of the spin relaxation processes compared to bulk or two-dimensional structures.
We have studied the spin dynamics of electrons, holes, neutral and charged excitons in undoped and doped QD by time-resolved photoluminescence. We will give a review of recent experimental results on optical spin injection and manipulation in InAs/GaAs, GaAs/AlGaAs, GaN/AlN quantum dots and ZnO nanoparticles.
We will also present recent results on the electrical spin injection in quantum wells or quantum dots through Co/Al2O3/GaAs or CoFeB/MgO/AlGaAs tunnel barriers.
 
 
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