Abstract:

Parabolic confinement potential can be built in semiconductor alloys structures by properly choosing the composition during the growth process. In this sense, wide parabolic quantum wells of Ga1\u2212xAlxAs have been built [1] keeping the Al composition below 35%. This system has the property that the effective g-factor, since it depends on the Al com- position, changes with position in the growth direction. Recently, an exact solution was obtained to treat this case under an external tilted magnetic field, for n-type Ga1\u2212xAlxAs [2]. In the present calculation we apply a transversal electric field in order to modulate the effect of the g-factor. We show that even in this case we find an exact solution to the problem. We explore the consequences of the electric field in the electronic properties of the carriers.
[1] G. M. Gusev, A. A. Quivy, T. E. Lamas, J. R. Leite, A. K. Bakarov, A. I. Toporov, O. Estibals, and J. C. Portal, Phys. Rev. B 65, 205316 (2002); G. M. Gusev, A. A. Quivy, T. E. Lamas, J. R. Leite, O. Estibals, and J. C. Portal, ibid 67, 155313 (2003).
[2] I. C. da Cunha Lima, G. M. Gusev, J. R. Leite, J. Supercond. 18, 169 (2005).
 
 
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